Electron weak localization in disordered films
نویسندگان
چکیده
منابع مشابه
Electron weak localization in disordered films.
The logarithmic temperature dependence of resistivity, commonly observed in disordered films, has generally been interpreted as evidence for electron weak localization, with its slope indicative of the inelastic scattering mechanism. In this work, we show that the two-dimensional ~2D! quantum percolation ~QP! model, pertaining to disordered metallic films, predicts a sample-size-dependent lnL c...
متن کاملUniversality of weak localization in disordered wires.
We compute the quantum correction δA due to weak localization for transport properties A = ∑ n a(Tn) of disordered quasi-one-dimensional conductors, by integrating the Dorokhov-Mello-Pereyra-Kumar equation for the distribution of the transmission eigenvalues Tn. The result δA = (1 − 2/β)[ 1 4 a(1) + ∫∞ 0 dx (4x + π2)−1a(cosh x)] is independent of sample length or mean free path, and has a unive...
متن کاملWeak localization and electron-electron interactions in polycrystalline tin dioxide films
Electrical and magnetotransport properties of polycrystalline tin dioxide films were investigated in the temperature range 2-300 K and in high magnetic fields up to 27 T. The experimental data were analyzed using models inherent both for 2D and 3D disordered systems. A crossover from 2D to 3D behaviour was observed as the temperature was increased.
متن کاملElectron–phonon scattering in disordered metallic films
The quantum interference between ‘pure’ electron–phonon and electron-boundary/impurity scattering drastically changes the electron–phonon relaxation rate. If impurities and boundaries vibrate in the same way as the host lattice, the electron–phonon relaxation rate is significantly decreased. In the presence of the scattering potential that does not vibrate with phonons (e.g. rigid boundaries, i...
متن کاملWeak localization in thin Cs films
Thin, quench condensed films of Cs change their resistance and Hall effect dramatically when covered with surface impurities. In this paper we investigate the quantum interference corrections to the resistance ~weak localization! and determine the inelastic dephasing rate of the conduction electrons. The dephasing rate is proportional to the temperature-dependent resistance. For pure Cs films t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 1996
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.53.r13268